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07B
CY7C107B CY7C1007B
1M x 1 Static RAM
Features
* High speed -- tAA = 12 ns * CMOS for optimum speed/power * Automatic power-down when deselected * TTL-compatible inputs and outputs Writing to the devices is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the input pin (DIN) is written into the memory location specified on the address pins (A0 through A19). Reading from the devices is accomplished by taking Chip Enable (CE) LOW while Write Enable (WE) remains HIGH. Under these conditions, the contents of the memory location specified by the address pins will appear on the data output (DOUT) pin. The output pin (DOUT) is placed in a high-impedance state when the device is deselected (CE HIGH) or during a write operation (CE and WE LOW). The CY7C107B is available in a standard 400-mil-wide SOJ; the CY7C1007B is available in a standard 300-mil-wide SOJ.
Functional Description
The CY7C107B and CY7C1007B are high-performance CMOS static RAMs organized as 1,048,576 words by 1 bit. Easy memory expansion is provided by an active LOW Chip Enable (CE) and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when deselected.
Logic Block Diagram
DIN
Pin Configuration
SOJ Top View A10 A11 A12 A13 A14 A15 NC A16 A17 A18 A19
1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15
INPUT BUFFER A0 A1 A2 A3 A4 A5 A6 A7 A8 ROW DECODER
512x2048 ARRA Y
DOUT
DOUT WE GND
VCC A9 A8 A7 A6 A5 A4 NC A3 A2 A1 A0 DIN CE
107B-2
COLUMN DECODER A9 A 10 A 11 A 12 A 13 A 14 A 15 A 16 A 17 A 18 A 19
POWER DOWN
SENSE AMPS
CE WE
107B-1
Selection Guide
7C107B-12 7C1007B-12 12 90 2 7C107B-15 7C1007B-15 15 80 2 7C107B-20 7C1007B-20 20 75 2 7C107B-25 7C1007B-25 25 70 2 7C107B-35 7C1007B-35 35 60 2
Maximum Access Time (ns) Maximum Operating Current (mA) Maximum CMOS Standby Current SB2 (mA)
Cypress Semiconductor Corporation Document #: 38-05030 Rev. **
*
3901 North First Street
*
San Jose
*
CA 95134 * 408-943-2600 Revised September 7, 2001
CY7C107B CY7C1007B
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ..................................... -65C to +150C Ambient Temperature with Power Applied.................................................. -55C to +125C Supply Voltage on VCC Relative to GND[1] .....-0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[1] ....................................... -0.5V to VCC + 0.5V DC Input Voltage[1] .................................... -0.5V to VCC + 0.5V Current into Outputs (LOW) ........................................ 20 mA Static Discharge Voltage ........................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current..................................................... >200 mA
Operating Range
Range Commercial Industrial Ambient Temperature[2] 0C to +70C -40C to +85C VCC 5V 10% 5V 10%
Electrical Characteristics Over the Operating Range
7C107B-12 7C1007B-12 Parameter VOH VOL VIH VIL IIX IOZ IOS ICC Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage[1] Input Load Current Output Leakage Current Output Short Circuit Current[3] VCC Operating Supply Current Automatic CE Power-Down Current-- TTL Inputs Automatic CE Power-Down Current-- CMOS Inputs GND < VI < VCC GND < VI < VCC, Output Disabled VCC = Max., VOUT = GND VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC Max. VCC, CE > VIH, VIN >VIH or VIN < VIL, f = f MAX Max. VCC, CE > VCC - 0.3V, VIN > VCC - 0.3V or VIN < 0.3V, f = 0 Test Conditions VCC = Min., IOH = -4.0 mA VCC = Min., IOL = 8.0 mA 2.2 -0.3 -1 -5 Min. 2.4 0.4 VCC+ 0.3 0.8 +1 +5 -300 90 2.2 -0.3 -1 -5 Max. 7C107B-15 7C1007B-15 Min. 2.4 0.4 VCC+ 0.3 0.8 +1 +5 -300 80 2.2 -0.3 -1 -5 Max. 7C107B-20 7C1007B-20 Min. 2.4 0.4 VCC+ 0.3 0.8 +1 +5 -300 75 Max. Unit V V V V A A mA mA
ISB1
20
20
20
mA
ISB2
2
2
2
mA
Notes: 1. VIL (min.) = -2.0V for pulse durations of less than 20 ns. 2. TA is the "Instant On" case temperature. 3. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
Document #: 38-05030 Rev. **
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CY7C107B CY7C1007B
Electrical Characteristics Over the Operating Range (continued)
7C107B-25 7C1007B-25 Parameter VOH VOL VIH VIL IIX IOZ IOS ICC Description Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Load Current Output Leakage Current Output Short Circuit Current[3] VCC Operating Supply Current Automatic CE Power-Down Current--TTL Inputs Automatic CE Power-Down Current--CMOS Inputs
[1]
7C107B-35 7C1007B-35 Min. 2.4 Max. Unit V 0.4 2.2 -0.3 -1 -5 VCC + 0.3 0.8 +1 +5 -300 60 V V V A A mA mA
Test Conditions VCC = Min., IOH = -4.0 mA VCC = Min., IOL = 8.0 mA
Min. 2.4
Max.
0.4 2.2 -0.3 VCC + 0.3 0.8 +1 +5 -300 70
GND < VI < VCC GND < VI < VCC, Output Disabled VCC = Max., VOUT = GND VCC = Max., IOUT = 0 mA, f = fMAX = 1/tRC Max. VCC, CE > VIH, VIN >VIH or VIN < VIL, f = f MAX Max. VCC, CE > VCC - 0.3V, VIN > VCC - 0.3V or VIN < 0.3V, f = 0
-1 -5
ISB1
20
20
mA
ISB2
2
2
mA
Capacitance[4]
Parameter CIN: Addresses CIN: Controls COUT Output Capacitance Description Input Capacitance Test Conditions TA = 25C, f = 1 MHz, VCC = 5.0V Max. 7 10 10 Unit pF pF pF
Note: 4. Tested initially and after any design or process changes that may affect these parameters.
Document #: 38-05030 Rev. **
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CY7C107B CY7C1007B
AC Test Loads and Waveforms
5V OUTPUT 30 pF INCLUDING JIG AND SCOPE (a) R2 255 R1 480 5V OUTPUT 5 pF INCLUDING JIG AND SCOPE (b) R2 255 R1 480 3.0V GND 10% 3 ns ALL INPUT PULSES 90% 90% 10% 3 ns
107-4 107-3
Equivalent to: OUTPUT
THEVENIN EQUIVALENT 167 1.73V
Switching Characteristics[5] Over the Operating Range
7C107B-12 7C1007B-12 Parameter READ CYCLE tRC tAA tOHA tACE tLZCE tHZCE tPU tPD tWC tSCE tAW tHA tSA tPWE tSD tHD tLZWE tHZWE Read Cycle Time Address to Data Valid Data Hold from Address Change CE LOW to Data Valid CE LOW to Low Z[6] CE HIGH to High Z
[6, 7]
7C107B-15 7C1007B-15 Min. 15 Max.
7C107B-20 7C1007B-20 Min. 20 Max.
7C107B-25 7C1007B-25 Min. 25 Max.
7C107B-35 7C1007B-35 Min. 35 Max. Unit ns 35 3 ns ns 35 3 10 0 35 35 25 25 0 0 25 20 0 3 ns ns ns ns ns ns ns ns ns ns ns ns ns ns 10 ns
Description
Min. 12
Max.
12 3 12 3 6 0 12 12 10 10 0 0 10 7 0 3 6 15 12 12 0 0 12 8 0 3 0 3 3
15 3 15 3 7 0 15 20 15 15 0 0 15 10 0 3 7
20 3 20 3 8 0 20 25 20 20 0 0 20 15 0 3 8
25
25 10 25
CE LOW to Power-Up CE HIGH to Power-Down Write Cycle Time CE LOW to Write End Address Set-Up to Write End Address Hold from Write End Address Set-Up to Write Start WE Pulse Width Data Set-Up to Write End Data Hold from Write End WE HIGH to Low Z
[6]
WRITE CYCLE[8]
WE LOW to High Z[6, 7]
10
Notes: 5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance. 6. At any given temperature and voltage condition, tHZCE is less than tLZCE and tHZWE is less than tLZWE for any given device. 7. tHZCE and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured 500 mV from steady-state voltage. 8. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.
Document #: 38-05030 Rev. **
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CY7C107B CY7C1007B
Switching Waveforms
Read Cycle No. 1[10, 11]
tRC ADDRESS tAA tOHA DATA OUT PREVIOUS DATA VALID DATA VALID
107-6
Read Cycle No. 2[11, 12]
ADDRESS tRC CE tACE tLZCE DATA OUT HIGH IMPEDANCE DATA VALID tPD 50% 50% ICC ISB
107-7
tHZCE
HIGH IMPEDANCE
VCC SUPPLY CURRENT
tPU
Write Cycle No. 1 (CE Controlled)[13]
tWC ADDRESS tSA CE tAW WE tPWE tSD DATA IN DATA VALID tHD tHA tSCE
DATA OUT
HIGH IMPEDANCE
107-8
Notes: 9. No input may exceed VCC + 0.5V. 10. Device is continuously selected, CE = VIL. 11. WE is HIGH for read cycle. 12. Address valid prior to or coincident with CE transition LOW.
Document #: 38-05030 Rev. **
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CY7C107B CY7C1007B
Switching Waveforms (continued)
Write Cycle No. 2 (WE Controlled)[13]
tWC ADDRESS tSCE CE tSA WE tSD DATA IN DATA VALID tHZWE DATA OUT DATA UNDEFINED
107-9
tAW tPWE
tHA
tHD
tLZWE HIGH IMPEDANCE
Note: 13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
Document #: 38-05030 Rev. **
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CY7C107B CY7C1007B
Truth Table
CE H L L WE X H L High Z Data Out High Z DOUT Read Write Mode Power-Down Standby (ISB) Active (ICC) Active (ICC) Power
Ordering Information
Speed (ns) 12 15 15 20 25 Ordering Code CY7C107B-12VC CY7C1007B-12VC CY7C107B-15VC CY7C1007B-15VC CY7C107B-15VI CY7C1007B-15VI CY7C107B-20VC CY7C1007B-20VC CY7C107B-25VC CY7C1007B-25VC Package Name V28 V28 V28 V28 V28 V28 V28 V28 V28 V28 Package Type 28-Lead (400-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ 28-Lead (400-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ 28-Lead (400-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ 28-Lead (400-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ 28-Lead (400-Mil) Molded SOJ 28-Lead (300-Mil) Molded SOJ Operating Range Commercial Commercial Commercial Commercial Industrial Industrial Commercial Commercial Commercial Commercial
Contact factory for "L" version availability.
Package Diagrams
28-Lead (400-Mil) Molded SOJ V28
51-85032-A
Document #: 38-05030 Rev. **
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CY7C107B CY7C1007B
28-Lead (300-Mil) Molded SOJ V21
Document #: 38-05030 Rev. **
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(c) Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.
CY7C107B CY7C1007B
Document Title: CY7C107B/CY7C1007B 1M x 1 Static RAM Document Number: 38-05030 REV. ** ECN NO. 109950 Issue Date 12/02/01 Orig. of Change SZV Description of Change Change from Spec number: 38-01116 to 38-05030
Document #: 38-05030 Rev. **
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